isc N-Channel MOSFET Transistor
TK7A80W
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.95Ω. ·Enhancement mode:
...
isc N-Channel
MOSFET Transistor
TK7A80W
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.95Ω. ·Enhancement mode:
Vth =3.0 to 4.0V (VDS = 10 V, ID=0.28mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching
Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
800
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous
6.5
A
IDM
Drain Current-Single Pulsed
26
A
PD
Total Dissipation @TC=25℃
35
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 3.57
UNIT ℃/W
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID=10mA
VGS(th)
Gate Threshold
Voltage
VDS=10V; ID=0.28mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=3.3A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=800V; VGS= 0V
VSDF
Diode forward
voltage
IDR =6.5A, VGS = 0 V
TK7A80W
MIN TYP MAX UNIT
800
V
3.0
4.0
V
950 mΩ
±1 μA
10
μA
1.7
V
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