TK80D08K3

TK80D08K3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80D08K3 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0±0.3 9.5±0.2 A 0.6±0.1 Ф3.65±0.2 Unit: mm 3.2 2.8 1.1±0.15 2.8Max. 9.0 15.0±0.3 0.75±0.25 12.8±0.5 +0.25 0.57 -0.10 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 80 320 100 443 80 10 150 −55 to 150 Unit V V V A W mJ A mJ °C °C 0.62±0.15 Ф0.2 M A 1 2 3 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain (Heat Sink) 3: Source 4.5±0.2 2.54 2.54 2.53±0.2 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriat...