MOSFETs Silicon N-channel MOS (U-MOS)
TK80S06K3L
1. Applications
• Automotive • Motor Drivers • DC-DC Converters • Swit...
MOSFETs Silicon N-channel MOS (U-MOS)
TK80S06K3L
1. Applications
Automotive Motor Drivers DC-DC Converters Switching
Voltage Regulators
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK80S06K3L
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
Start of commercial production
2011-04
1
2014-08-04
Rev.4.0
TK80S06K3L
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS
60
V
Gate-source
voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
80
A
Drain current (pulsed)
(Note 1)
IDP
160
Power dissipation
(Tc = 25)
PD
100
W
Single-pulse avalanche energy
(Note 2)
EAS
94
mJ
Avalanche current
IAR
80
A
Channel temperature
(Note 3)
Tch
175
Storage temperature
(Note 3)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions...