DatasheetsPDF.com

TK8A10K3 Datasheet

Part Number TK8A10K3
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Field Effect Transistor
Datasheet TK8A10K3 DatasheetTK8A10K3 Datasheet (PDF)

TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications • • • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS I.

  TK8A10K3   TK8A10K3






Field Effect Transistor

TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications • • • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR Tch Tstg Rating 100 100 ±20 8 16 18 4 8 150 −55 to 150 Unit V V V A W mJ A °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC ⎯ Note : Using continuously under heavy loads (e.g. the application of JEITA SC-67 high temperature/current/voltage and the significant change in TOSHIBA 2-10U1B temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Please use devices on condition that the channel temperature is .


2014-09-11 : D78F0536    UPD78F0531    UPD78F0532    UPD78F0533    UPD78F0534    UPD78F0535    UPD78F0536    UPD78F0537    UPD78F0537D    IRFS3004-7PPbF   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)