TK8A10K3
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS )
TK8A10K3
Swiching Regulator Applications
• • • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS I.
Field Effect Transistor
TK8A10K3
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS )
TK8A10K3
Swiching Regulator Applications
• • • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR Tch Tstg Rating 100 100 ±20 8 16 18 4 8 150 −55 to 150 Unit V V V A W mJ A °C °C
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Channel temperature Storage temperature range
1: Gate 2: Drain 3: Source
JEDEC
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Note :
Using continuously under heavy loads (e.g. the application of JEITA SC-67 high temperature/current/voltage and the significant change in TOSHIBA 2-10U1B temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is .