TK8A25DA

MOSFETs Silicon N-Channel MOS (π-MOS) TK8A25DA 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8A25DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 3) (Note 1) (Note 1) ID IDP PD EAS IAR IDR IDRP Tch 7.5 A 30 30 W 45 mJ 7.5 A 7.5 30 150  Storage temperature Tstg -55 to 150 Isolation voltage (RMS) Mounting torque (t = 1.0 s) VISO(RMS) TOR 2000 0.6 V Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precau...