TLN108F

TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission TO−18 metal package High radiant intensity: IE = 20 mW/sr (typ.) Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible. Highly reliable due to hermetic seal TLN108(F) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current Forward current derating (Ta > 25°C) Pulse forward current (Note 1) Reverse voltage Operating temperature range Storage temperature range IF ΔIF / °C IFP VR Topr Tstg 100 −1 1 5 −40~125 −55~150 mA mA / °C A V °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz TOSHIBA 4−5Q2 Weight: 0.33 g (typ.) Pin Connection 12 1. Anode 2. Cathode (case) Markings Product No. (TL omitted) Monthly lot number ...