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TMBR6S08

SeCoS Halbleitertechnologie

Voltage 600V 0.8Amp Silicon Bridge Rectifiers

TMBR6S08 Elektronische Bauelemente Voltage 600V 0.8 Amp Silicon Bridge Rectifiers RoHS Compliant Product A suffix of “-...


SeCoS Halbleitertechnologie

TMBR6S08

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Description
TMBR6S08 Elektronische Bauelemente Voltage 600V 0.8 Amp Silicon Bridge Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Ultra Low leakage current IR<2µA,TA=125°C No solder used,Real fully in line with lead free Package Thickness is 1.2mm High ESD >12KV(HBM MODEL) Plastic material has U/L flammability classification 94V-0 High temperature soldering guaranteed: 260°C/10s(Reflow) 350°C/3s(Manual welding) TMB MECHANICAL DATA Small signal rectifier devices. PACKAGE INFORMATION Package TMB MPQ 5K Leader Size 13 inch REF. A B C D E Millimeter Min. Max. 4.5 4.7 3.6 3.8 1.2 TYP. 2.6 2.8 0.45 0.65 REF. F G H I J Millimeter Min. Max. 6.6 7.0 0.2 TYP. 0.6 0.8 0.9 1.1 0.05 0.15 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Parameter Maximum Recurrent Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TA=25° C Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Instantaneous Forward Voltage @ IF=0.4A Typical thermal resistance Operating & Storage Temperature Range TA=25° C TA=125° C Symbol VRRM VRMS VDC I F(AV) IFSM IR Rating 600 420 600 0.8 14 0.5 Unit V V V A A µA 2 VF RθJA TJ,TSTG 1 200 -55~150 V ° C/ W ...




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