Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
D-PAK
TMD3N50Z(G)/TMU3N50Z(G)
BVDSS 500V
N-channel
MOSFET
ID RDS(on)
2.5A
<2.8W
I-PAK
Device TMD3N50Z / TMU3N50Z TMD3N50ZG / TMU3N50ZG
Package D-PAK/I-PAK D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMD3N50Z / TMU3N50Z TMD3N50ZG / TMU3N50ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMD3N50Z(G)/TMU3N50Z(G) 500 ±30 2.5 1.8 10 107 2.5 5.2 52 0.41 4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
May 2012 : Rev0
www.trinnotech.com
TMD3N50Z(G)/TMU3N50Z(G) 2.4 110
Unit ℃/W ℃/W
1/6
TMD3N50Z(G)/TMU3N50Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Br...