TMD5N40ZG

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK Device TMD5N40ZG/TMU5N40ZG Package D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG VDSS = 440 V @Tjmax ID = 3.4A RDS(on) = 1.6 W(max) @ VGS= 10 V I-PAK D G S Marking TMD5N40ZG/TMU5N40ZG Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA August 2011 : Rev0 www.trinnotech.com TMD5N40ZG/TMU5N40ZG 400 ±30 3.4* 2.15* 13.6* 165 3.4 5.0 50 0.4 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ TMD5N40ZG/TMU5N40ZG 2.5 110 Unit ℃/W ℃/W 1/6 TMD5N40ZG/TMU5N40ZG Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Gate-Sou...