Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMD6N65G/TMU6N65G
VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.6 W(max) @ VGS= 10 V
D-PAK
I-PAK
D
G
S
Device TMD6N65/TMU6N65 TMD6N65G/TMU6N65G
Package D-PAK/I-PAK D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMD6N65/TMU6N65 TMD6N65G/TMU6N65G
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMD6N65(G)/TMU6N65(G) 650 ±30 5.5 3.46 22
196.6 5.5 12 120 0.96 4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
June 2011 : Rev2
www.trinnotech.com
TMD6N65(G)/TMU6N65(G) 1.04 110
Unit ℃/W ℃/W
1/6
TMD6N65G/TMU6N65G
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown V...