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TMM41256P-15

Toshiba

DRAM

TOSHIBA MOS MEMORY PRODUCT 262,144 WORD X 1 BIT DYNAMIC RAM N-CHANNEL SILICON GATE MOS TMM41256P/T-12 TMM41256P/T-15 ...


Toshiba

TMM41256P-15

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Description
TOSHIBA MOS MEMORY PRODUCT 262,144 WORD X 1 BIT DYNAMIC RAM N-CHANNEL SILICON GATE MOS TMM41256P/T-12 TMM41256P/T-15 DESCRIPTION The TMM41256P/T is the new generation dynamic RAM organized 262,144 words by 1 bit, it is successor to the industry standard TMM4164AP. The TMM41256P/T utilizes TOSHI BA's N-channel Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TMM- 41256P IT to be packaged in a standard 16 pin plastic DIP and 18 pin plastic leaded chip carner. The package size provides high system t)lt riensltles and IS compatible with Widely available al:ltomated testing and Insertion eqUipment, System oriented features include sing Ie power supply of 5V ± 10% tolerance, direct interfacing capability with high perforrna nce logic families such as Schottky TTL. FEATURES 262,144 words by 1 bit organization Fast access time and cycle time DEV...




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