Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery
TMP5N50/TMPF5N50 TMP5N50G/TMPF5N50G
VDSS = 550 V @Tjmax ID = 4.5A RDS(ON) = 1.65 W(max) @ VGS= 10 V
D
G
Device TMP5N50 / TMPF5N50 TMP5N50G / TMPF5N50G
Package TO-220 / TO-220F TO-220 / TO-220F
S
Marking TMP5N50 / TMPF5N50 TMP5N50G / TMPF5N50G
Remark RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP5N50(G) TMPF5N50(G) 500 ±30
4.5 4.5 * 2.86 2.86 * 18 18*
240 4.5 9.25 92.5 32 0.74 0.25 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter
Symbol
Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
RqJC RqJA
August 2010 : Rev1
www.trinnotech.com
TMP5N50(G) 1.35 62.5
TMPF5N50(G) 3.9 62.5
Unit ℃/W ℃/W
1/5
TMP5N50/TMPF5N50 TMP5N50G/TMPF5N50G
Electrical Characteristics : TC=2...