Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP830Z(G)/TMPF830Z(G)
BVDSS 500V
N-channel
MOSFET
ID RDS(on)
4.5A
<1.5W
Device TMP830Z / TMPF830Z TMP830ZG / TMPF830ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP830Z/ TMPF830Z TMP830ZG/ TMPF830ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP830Z(G) TMPF830Z(G) 500 ±30
4.5 4.5 * 3.1 3.1 18 18
282 4.5 9.84 98.4 32.9 0.78 0.26 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
May 2012 : Rev0
www.trinnotech.com
TMP830Z(G) 1.27 62.5
TMPF830Z(G) 3.8 62.5
Unit ℃/W ℃/W
1/7
TMP830Z(G)/TMPF830Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Un...