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TMP8N50Z Datasheet

Part Number TMP8N50Z
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMP8N50Z DatasheetTMP8N50Z Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP8N50Z(G)/TMPF8N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8A <0.85W Device TMP8N50Z/TMPF8N50Z TMP8N50ZG/TMPF8N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (N.

  TMP8N50Z   TMP8N50Z






Part Number TMP8N50ZG
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMP8N50Z DatasheetTMP8N50ZG Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP8N50Z(G)/TMPF8N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8A <0.85W Device TMP8N50Z/TMPF8N50Z TMP8N50ZG/TMPF8N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (N.

  TMP8N50Z   TMP8N50Z







N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP8N50Z(G)/TMPF8N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8A <0.85W Device TMP8N50Z/TMPF8N50Z TMP8N50ZG/TMPF8N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP8N50Z/TMPF8N50Z TMP8N50ZG/TMPF8N50ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP8N50Z(G) TMPF8N50Z(G) 500 ±30 8.0 8.0 * 4.5 4.5 * 32 32 * 554 8 12 120 39 0.96 0.31 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA August 2012 : Rev0 www.trinnotech.com TMP8N50Z(G) 1.04 62.5 TMPF8N50Z(G) 3.2 62.5 Unit ℃/W ℃/W 1/7 TMP8N50Z(G)/TMPF8N50Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min T.


2016-06-16 : TMPF16N25ZG    TMP16N25ZG    TMPF16N25Z    TMP16N25Z    TMT3N40ZG    TMT3N30G    TMU3N40ZG    TMD3N40ZG    TMU5N40ZG    TMD5N40ZG   


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