Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP10N65A(G)/TMPF10N65A(G)
BVDSS 650V
N-channel
MOSFET
ID RDS(on)
9.5A
<0.82W
D
G S
Device TMP10N65A / TMPF10N65A TMP10N65AG / TMPF10N65AG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP10N65A / TMPF10N65A TMP10N65AG / TMPF10N65AG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP10N65A(G) TMPF10N65AG) 650 ±30
9.5 9.5 * 5.83 5.83 * 38 38 *
690 9.5 19.8 198 52 1.58 0.41 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP10N65A(G) 0.63 62.5
September 2012 : Rev0
www.trinnotech.com
TMPF10N65A(G) 2.4 62.5
Unit ℃/W ℃/W
1/7
TMP10N65A(G)/TMPF10N65A(G)
Electrical Characteristics : TC=25℃, unless otherwise noted...