Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP16N60A(G)/TMPF16N60A(G)
BVDSS 600V
N-channel
MOSFET ID RDS(on) 16A < 0.47W
Device TMP16N60A / TMPF16N60A TMP16N60AG / TMPF16N60AG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP16N60A / TMPF16N60A TMP16N60AG / TMPF16N60AG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP16N60A(G) TMPF16N60A(G) 600 ±30
16 16 * 9.97 9.97 * 64 64 *
194 16 29 290 48 2.32 0.38 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP16N60A(G) 0.43 62.5
December 2014 : Rev0.1
www.trinnotech.com
TMPF16N60A(G) 2.6 62.5
Unit ℃/W ℃/W
1/7
TMP16N60A(G)/TMPF16N60A(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
S...