TMPF8N50ZG

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP8N50Z(G)/TMPF8N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8A <0.85W Device TMP8N50Z/TMPF8N50Z TMP8N50ZG/TMPF8N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP8N50Z/TMPF8N50Z TMP8N50ZG/TMPF8N50ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP8N50Z(G) TMPF8N50Z(G) 500 ±30 8.0 8.0 * 4.5 4.5 * 32 32 * 554 8 12 120 39 0.96 0.31 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA August 2012 : Rev0 www.trinnotech.com TMP8N50Z(G) 1.04 62.5 TMPF8N50Z(G) 3.2 62.5 Unit ℃/W ℃/W 1/7 TMP8N50Z(G)/TMPF8N50Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min T...