Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP9N50/TMPF9N50 TMP9N50G/TMPF9N50G
VDSS = 550 V @Tjmax ID = 9A RDS(on) = 0.85 W(max) @ VGS= 10 V
D
G
S
Device TMP9N50 / TMPF9N50 TMP9N50G / TMPF9N50G
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP9N50 / TMPF9N50 TMP9N50G / TMPF9N50G
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP9N50(G) TMPF9N50(G) 500 ±30
9 9* 5.3 5.3 * 36 36*
364 9
14.3 143 46.6 1.16 0.37
4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
July 2010 : Rev1
www.trinnotech.com
TMP9N50(G) 0.87 62.5
TMPF9N50(G) 2.68 62.5
Unit ℃/W ℃/W
1/5
TMP9N50/TMPF9N50 TMP9N50G/TMPF9N50G
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter...