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TMPF9N50SG Datasheet

Part Number TMPF9N50SG
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF9N50SG DatasheetTMPF9N50SG Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N50S(G)/TMPF9N50S(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8.5A <0.85W D G S Device TMP9N50S / TMPF9N50S TMP9N50SG / TMPF9N50SG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Ava.

  TMPF9N50SG   TMPF9N50SG






Part Number TMPF9N50S
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF9N50SG DatasheetTMPF9N50S Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N50S(G)/TMPF9N50S(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8.5A <0.85W D G S Device TMP9N50S / TMPF9N50S TMP9N50SG / TMPF9N50SG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Ava.

  TMPF9N50SG   TMPF9N50SG







N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N50S(G)/TMPF9N50S(G) BVDSS 500V N-channel MOSFET ID RDS(on) 8.5A <0.85W D G S Device TMP9N50S / TMPF9N50S TMP9N50SG / TMPF9N50SG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP9N50S / TMPF9N50S TMP9N50SG / TMPF9N50SG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP9N50S(G) TMPF9N50S(G) 500 ±30 8.5 8.5 * 4.87 4.87 * 34 34 * 439 8.5 12.7 127 39 1.01 0.31 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA June 2012 : Rev0 www.trinnotech.com TMP9N50(G) 0.98 62.5 TMPF9N50S(G) 3.2 62.5 Unit ℃/W ℃/W 1/7 TMP9N50S(G)/TMPF9N50S(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol .


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