TMS28F1600T

PRODUCT PREVIEW TMS28F1600T, TMS28F1600B 16M-BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 – JANUARY 1997 D Auto-Select VCC and VPP Voltages – 2.7 V, 3.3 V, or 5 V Read Operation (VCC) – 2.7 V, 3.3 V, 5 V, or 12 V Program Erase (VPP) D Fast Read Access Time – 5 V: 80/90 ns MAX – 2.7 V, 3.3 V: 90/100 ns MAX D Low Power Consumption (VCC = 5.5V) – Active Write 220 mW (Byte Mode)† – Active Read 248 mW (Byte Mode)† – Active Write 220 mW (Word Mode)† – Active Read 248 mW (Word Mode)† – Block-Erase 220 mW† – Standby 0.55 mW – Deep Power-Down Mode 0.044 mW D Automatic Power-Saving Mode D Sector Architecture – One 16K-Byte Protected Boot Block – Two 8K-Byte Parameter Blocks – One 96K-Byte Main Block – Fifteen 128K-Byte Main Blocks – Top or Bottom Boot Locations D User-Selectable x8 or x16 Operation D Fully Automated On-Chip Erase and Byte/Word Program Operations D All Inputs/Outputs TTL-Compatible D Supports Concurrent Operations – Read During Program – Read During Erase – Program During Erase – Two-Byte / -Word Programming – Two Sector Combinations Erasure D Enhanced Suspend Options – Sector-Erase-Suspend to Read – Sector-Erase-Suspend to Program – Program-Suspend to Read D Command Set Compatible With Previous Generation of Flash D Transition Between Single-Operation and Concurrent-Operations Mode by way of Software Command D 100000 Program / Erase Cycles Per Sector D Hardware Write-Protection for Boot ...