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TMS28F200BZT Datasheet

Part Number TMS28F200BZT
Manufacturers Texas Instruments
Logo Texas Instruments
Description BOOT-BLOCK FLASH MEMORIES
Datasheet TMS28F200BZT DatasheetTMS28F200BZT Datasheet (PDF)

D Organization . . . 262144 by 8 bit s 131 072 by 16 bits D Array-Blocking Architecture – Two 8K-Byte Parameter Blocks – One 96K-Byte Main Block – One 128K-Byte Main Block – One 16K-Byte Protected Boot Block – Top or Bottom Boot Locations D All Inputs / Outputs TTL Compatible D Maximum Access / Minimum Cycle Time VCC ± 10% ’28F200BZx70 70 ns ’28F200BZx80 80 ns ’28F200BZx90 90 ns (x = top (T) or bottom (B) boot-block configurations ordered) D 10000 Program / Erase-Cycles D Three Temperature Range.

  TMS28F200BZT   TMS28F200BZT






Part Number TMS28F200BZB
Manufacturers Texas Instruments
Logo Texas Instruments
Description BOOT-BLOCK FLASH MEMORIES
Datasheet TMS28F200BZT DatasheetTMS28F200BZB Datasheet (PDF)

D Organization . . . 262144 by 8 bit s 131 072 by 16 bits D Array-Blocking Architecture – Two 8K-Byte Parameter Blocks – One 96K-Byte Main Block – One 128K-Byte Main Block – One 16K-Byte Protected Boot Block – Top or Bottom Boot Locations D All Inputs / Outputs TTL Compatible D Maximum Access / Minimum Cycle Time VCC ± 10% ’28F200BZx70 70 ns ’28F200BZx80 80 ns ’28F200BZx90 90 ns (x = top (T) or bottom (B) boot-block configurations ordered) D 10000 Program / Erase-Cycles D Three Temperature Range.

  TMS28F200BZT   TMS28F200BZT







BOOT-BLOCK FLASH MEMORIES

D Organization . . . 262144 by 8 bit s 131 072 by 16 bits D Array-Blocking Architecture – Two 8K-Byte Parameter Blocks – One 96K-Byte Main Block – One 128K-Byte Main Block – One 16K-Byte Protected Boot Block – Top or Bottom Boot Locations D All Inputs / Outputs TTL Compatible D Maximum Access / Minimum Cycle Time VCC ± 10% ’28F200BZx70 70 ns ’28F200BZx80 80 ns ’28F200BZx90 90 ns (x = top (T) or bottom (B) boot-block configurations ordered) D 10000 Program / Erase-Cycles D Three Temperature Ranges – Commercial . . . 0°C to 70°C – Extended . . . – 40°C to 85°C – Automotive . . . – 40°C to 125°C D Low Power Dissipation ( VCC = 5.5 V ) – Active Write . . . 330 mW ( Byte-Write) – Active Read . . . 330 mW ( Byte-Read) – Active Write . . . 358 mW ( Word-Write) – Active Read . . . 330 mW ( Word-Read) – Block-Erase . . . 165 mW – Standby . . . 0.55 mW (CMOS-Input Levels) – Deep Power-Down Mode . . . 0.0066 mW D Fully Automated On-Chip Erase and Word / Byte-Program Operations D Write-Protection for Boot Block D Industry-Standard Command State Machine (CSM) – Erase-Suspend/Resume – Algorithm-Selection Identifier TMS28F200BZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SMJS200E – JUNE 1994 – REVISED JANUARY 1998 DBJ PACKAGE ( TOP VIEW ) VPP NC NC A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 RP 43 W 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 33 BYTE 32 VSS 3.


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