FLASH MEMORIES
D Single Power Supply Supports 5-V "10%
Read/Write Operation
D Organization : . . . 262 144 by 8 Bits D Array-Blocking A...
Description
D Single Power Supply Supports 5-V "10%
Read/Write Operation
D Organization : . . . 262 144 by 8 Bits D Array-Blocking Architecture
− One 16K-Byte Boot Sector − Two 8K-Byte Parameter Sectors − One 32K-Byte Sector − Three 64K-Byte Sectors − Any Combination of Sectors Can Be
Erased. Support Full-Chip Erase − Any Combination of Sectors Can Be
Marked as Read-Only
D Boot-Code Sector Architecture
− T = Top Sector − B = Bottom Sector
D Sector Protection
− Hardware Protection Method That Disables Any Combination of Sectors From Write or Erase Operations Using Standard Programming Equipment
D Embedded Program/Erase Algorithms
− Automatically Pre-Programs and Erases Any Sector
− Automatically Programs and Verifies the Program Data at Specified Address
D JEDEC Standards
− Compatible With JEDEC Byte Pinouts − Compatible With JEDEC EEPROM
Command Set
D Fully Automated On-Chip Erase and
Program Operations
D 100 000 Program/Erase Cycles D Low Power Dissipation D Low Current Consumption
− 25-mA Typical Active Read − 30-mA Typical Program/Erase Current − Less Than 100-µA Standby Current
D All Inputs/Outputs TTL-Compatible D Erase Suspend/Resume
− Supports Reading Data From, or Programming Data to, a Sector Not Being Erased
D Hardware-Reset Pin Initializes the
Internal-State Machine to the Read Operation
TMS29F002RT, TMS29F002RB 262ā144 BY 8ĆBIT
FLASH MEMORIES
SMJS849B − MARCH 1997 − REVISED JUNE 1998
FM PACKAGE 32-PIN PLCC (TOP VIEW)
A12 A15 A16 RESET VCC WE A17
4 3 2 1 32 31 30
A7 A6 A5 ...
Similar Datasheet