TMS29LF008T

D Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation D Organization . . . 1 048576 By 8 Bits D Array Blocking Architecture – One 16K-Byte Boot Sector – Two 8K-Byte Parameter Sectors – One 32K-Byte Sector – Fifteen 64K-Byte Sectors – Any Combination of Sectors Can Be Erased. Supports Full-Chip Erase – Any Combination of Sectors Can Be Marked as Read-Only D Boot-Code Sector Architecture – T = Top Sector – B = Bottom Sector D Sector Protection – Hardware Protection Method That Disables Any Combination of Sectors From Write or Erase Operations Using Standard Programming Equipment D Embedded Program/Erase Algorithms – Automatically Pre-Programs and Erases Any Sector – Automatically Programs and Verifies the Program Data at Specified Address D JEDEC Standards – Compatible With JEDEC Byte Pinouts – Compatible With JEDEC EEPROM Command Set D Fully Automated On-Chip Erase and Program Operations D 100 000 Program/Erase Cycles D Low Power Dissipation D Low Current Consumption – 20-mA Typical Active Read for Byte Mode – 30-mA Typical Program / Erase Current – Less Than 60-µA Standby Current – 5 µA in Deep Power-Down Mode TMS29LF008T, TMS29LF008B 1048576 BY 8-BIT FLASH MEMORIES SMJS846A – MAY 1997 – REVISED NOVEMBER 1997 D All Inputs/Outputs TTL-Compatible D Erase Suspend/Resume – Supports Reading Data From, or Programming Data to, a Sector Not Being Erased D Hardware-Reset Pin Initializes the Internal-State Machine to the Read Operation D 40-Pin Thin Small-Outline Package...