FLASH MEMORIES
PRODUCT PREVIEW
D Single Power Supply Supports 2.7-V and
3.6-V Read/Write Operation
D Organization
1 048 576 By 8 Bits
...
Description
PRODUCT PREVIEW
D Single Power Supply Supports 2.7-V and
3.6-V Read/Write Operation
D Organization
1 048 576 By 8 Bits
524 288 By 16 Bits
D Array-Blocking Architecture
– One 16K-Byte/One 8K-Word Boot Sector
– Two 8K-Byte/4K-Word Parameter Sectors
– One 32K-Byte/16K-Word Sector
– Fifteen 64K-Byte/32K-Word Sectors
– Any Combination of Sectors Can Be
Erased. Supports Full-Chip Erase
– Any Combination of Sectors Can Be
Marked as Read-Only
D Boot-Code Sector Architecture
– T = Top Sector
– B = Bottom Sector
D Sector Protection
– Hardware Protection Method That
Disables Any Combination of Sectors
From Write or Erase Operations Using
Standard Programming Equipment
D Embedded Program/Erase Algorithms
– Automatically Pre-Programs and Erases
Any Sector
– Automatically Programs and Verifies the
Program Data at Specified Address
D JEDEC Standards
– Compatible With JEDEC Byte Pinouts
– Compatible With JEDEC EEPROM
Command Set
D Fully Automated On-Chip Erase and
Program Operations
D 100 000 Program/Erase Cycles D Low Power Dissipation
– 20-mA Typical Active Read for Byte Mode
– 28-mA Typical Active Read for Word
Mode
– 30-mA Typical Program/Erase Current – Less Than 60-µA Standby Current – 5 µA in Deep Power-Down Mode
D All Inputs/Outputs TTL-Compatible
TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT
FLASH MEMORIES
SMJS828B – SEPTEMBER 1996 – REVISED OCTOBER 1997
D Erase Suspend/Resume
– Supports Reading Data From, or
Programming Data to, a Sector Not
Being Erased
D Hardware-R...
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