TMS416100

This data sheet is applicable to all TMS416100/Ps symbolized with Revision “B” and subsequent revisions as described on page 24. Organization . . . 16 777 216 × 1 Single 5-V Power Supply (±10% Tolerance) Performance Ranges: ’416100- 60 ’416100- 70 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE tRAC tCAC tAA CYCLE (MAX ) (MAX ) (MAX ) (MIN) 60 ns 15 ns 30 ns 110 ns 70 ns 18 ns 35 ns 130 ns ’416100- 80 80 ns 20 ns 40 ns 150 ns Enhanced Page Mode Operation for Faster Memory Access CAS-Before-RAS Refresh Long Refresh Period – 4096 Cycle Refresh in 64 ms (TMS416100) – 256 ms for Extended Refresh Version (TMS416100P) 3-State Unlatched Output Low Power Dissipation (TMS416100P Only) – 500-µA CMOS Standby Current – 500-µA Self-Refresh Current – 500-µA Extended Refresh Battery Backup Current All Inputs, Outputs and Clocks Are TTL Compatible Operating Free-Air Temperature Range: 0°C to 70°C TMS416100, TMS416100P 16 777 216-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMKS611 – FEBRUARY 1994 DJ PACKAGE ( TOP VIEW ) DGA PACKAGE ( TOP VIEW ) VCC D NC W RAS A11 1 2 3 4 5 6 26 VSS 25 Q 24 NC 23 CAS 22 NC 21 A9 VCC D NC W RAS A11 1 2 3 4 5 6 26 VSS 25 Q 24 NC 23 CAS 22 NC 21 A9 A10 8 19 A8 A0 9 18 A7 A1 10 17 A6 A2 11 16 A5 A3 12 15 A4 VCC 13 14 VSS A10 8 19 A8 A0 9 18 A7 A1 10 17 A6 A2 11 16 A5 A3 12 15 A4 VCC 13 14 VSS PIN NOMENCLATURE A0 – A11 CAS D Q NC RAS VCC VSS W Address Inputs Column-Address Strobe Data In Data Out No Internal Co...