TMS418169

TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS D Organization . . . 1 048576 Words by 16 Bits D Single 5-V Power Supply D Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO tRAC MAX tCAC MAX tAA MAX CYCLE MIN ’41x169/P-60 60 ns 15 ns 30 ns 25 ns ’41x169/P-70 70 ns 18 ns 35 ns 30 ns ’41x169/P-80 80 ns 20 ns 40 ns 35 ns D Extended-Data-Out (EDO) Operation D xCAS-Before-RAS ( xCBR) Refresh D RAS-Only Refresh – 1 024-Cycle Refresh in 16 ms (TMS418169) – 4 096-Cycle Refresh in 64 ms (TMS416169) D 3-State Unlatched Output D High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package D Operating Free-Air Temperature Range 0°C to 70°C D Texas Instruments Enhanced Performance Implanted CMOS (EPIC™) Process SMKS886C – MAY1995 – REVISED MARCH 1996 DZ PACKAGE ( TOP VIEW ) VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC NC W RAS A11† A10† A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 VSS 41 DQ15 40 DQ14 39 DQ13 38 DQ12 37 VSS 36 DQ11 35 DQ10 34 DQ9 33 DQ8 32 NC 31 LCAS 30 UCAS 29 OE 28 A9 27 A8 26 A7 25 A6 24 A5 23 A4 22 VSS description † A10 and A11 are NC for TMS418169. The TMS418169 and the TMS416169 are high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost. These devices feature maximum RAS access...