TMS44409P

ADVANCE INFORMATION TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS563 – JULY1995 D Organization . . . 1 048576 × 4 D Single 5-V Power Supply (±10% Tolerance) DJ PACKAGE ( TOP VIEW ) DGA PACKAGE ( TOP VIEW ) D Performance Ranges: ACCESS TIME (tRAC) (MAX) ’44409 / P-60 60 ns ’44409 / P-70 70 ns ACCESS TIME (tCAC) (MAX) 15 ns 18 ns ACCESS TIME (tAA) (MAX) 30 ns 35 ns EDO CYCLE (tHPC) (MIN) 25 ns 30 ns DQ1 DQ2 W RAS A9 1 2 3 4 5 26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE DQ1 DQ2 W RAS A9 1 2 3 4 5 26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE ’44409 / P-80 80 ns 20 ns 40 ns 35 ns D Extended Data Out ( EDO) Operation D CAS-Before-RAS ( CBR) Refresh A0 9 18 A8 A0 9 18 A8 D 3-State Unlatched Output D Low Power Dissipation D All Inputs / Outputs and Clocks are TTL-Compatible A1 A2 A3 VCC 10 11 12 13 17 A7 16 A6 15 A5 14 A4 A1 A2 A3 VCC 10 11 12 13 17 A7 16 A6 15 A5 14 A4 D Long Refresh Period – 1 024 Cycle Refresh in 16 ns (max) – 128 ms on Low Power, Self-Refresh Version (TMS44409P Only) D Operating Free-Air Temperature Range 0°C to 70°C PIN NOMENCLATURE A0 – A9 CAS DQ1 – DQ4 Address Inputs Column-Address Strobe Data In / Data Out description OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each. This VCC VSS W 5-V Supply Ground Write Enable device features maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum pow...