ADVANCE INFORMATION
TMS44400, TMS44400P, TMS46400, TMS46400P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS5...
ADVANCE INFORMATION
TMS44400, TMS44400P, TMS46400, TMS46400P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS562C – MAY 1995 – REVISED NOVEMBER 1996
D Organization . . . 1 048576 × 4 D Single 5-V Power Supply for TMS44400 / P
(± 10% Tolerance)
D Single 3.3-V Power Supply for TMS46400 / P
(± 10% Tolerance)
D Low Power Dissipation ( TMS46400P only)
200-µA
CMOS Standby
200-µA Self Refresh
300-µA Extended-Refresh Battery
Backup
D Performance Ranges:
ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE (tRAC) (tCAC) (tAA) CYCLE (MAX) (MAX) (MAX) (MIN)
’4x400/P-60
60 ns 15 ns 30 ns 110 ns
’4x400/P-70
70 ns 18 ns 35 ns 130 ns
’4x400/P-80
80 ns 20 ns 40 ns 150 ns
D Enhanced Page-Mode Operation for Faster
Memory Access
D CAS-Before-RAS ( CBR) Refresh
D Long Refresh Period
1024-Cycle Refresh in 16 ms
128 ms (MAX) for Low-Power,
Self-Refresh Version ( TMS4x400P)
D 3-State Unlatched Output
D Texas Instruments EPIC™
CMOS Process
DGA PACKAGE ( TOP VIEW )
DJ PACKAGE ( TOP VIEW )
DQ1 DQ2
W RAS
A9
1 2 3 4 5
26 VSS DQ1 1 25 DQ4 DQ2 2
24 DQ3
W3
23 CAS RAS 4
22 OE
A9 5
26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE
A0 A1 A2 A3 VCC
9 10 11 12 13
18 A8 17 A7 16 A6 15 A5 14 A4
A0 A1 A2 A3 VCC
9 10 11 12 13
18 A8 17 A7 16 A6 15 A5 14 A4
PIN NOMENCLATURE
A0 – A9 CAS DQ1 – DQ4 OE RAS VCC VSS W
Address Inputs Column-Address Strobe Data In Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable
D Operating Free-Air Temperature Range
0°C to 70°C
descripti...