TMS626812A

TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization 1M Words × 8 Bits × 2 Banks D 3.3-V Power Supply (± 10% Tolerance) D Two Banks for On-Chip Interleaving (Gapless Accesses) D High Bandwidth − Up to 100-MHz Data Rates D CAS Latency (CL) Programmable to 2 or 3 Cycles From Column-Address Entry D Burst Sequence Programmable to Serial or Interleave D Burst Length Programmable to 1, 2, 4, or 8 D Chip Select and Clock Enable for Enhanced-System Interfacing D Cycle-by-Cycle DQ-Bus Mask Capability D Auto-Refresh and Self-Refresh Capabilities D 4K Refresh (Total for Both Banks) D High-Speed, Low-Noise, Low-Voltage TTL (LVTTL) Interface D Power-Down Mode D Compatible With JEDEC Standards D Pipeline Architecture D Temperature Ranges Operating, 0°C to 70°C Storage, − 55°C to 150°C D Performance Ranges: ’626812A-10 SYNCHRONOUS CLOCK CYCLE TIME tCK3 tCK2 (CL† = 3) (CL = 2) 10 ns 15 ns ACCESS TIME (CLOCK TO OUTPUT) tAC3 tAC2 (CL = 3) (CL = 2) 7 ns 7 ns REFRESH TIME INTERVAL 64 ms † CL = CAS latency description The TMS626812A is a high-speed, 16777 216-bit synchronous dynamic random-access memory (SDRAM) device organized as: D Two banks of 1 048 576 words with 8 bits per word TMS626812A DGE PACKAGE ( TOP VIEW ) VCC DQ0 VSSQ DQ1 VCCQ DQ2 VSSQ DQ3 VCCQ NC NC W CAS RAS CS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 VSS 43 DQ7 42 VSSQ 41 DQ6 40 VCC...