Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
D-PAK
TMD16N25Z(G)/TMU16N25Z(G)
BVDSS 250V
N-channel
MOSFET ID RDS(on) 16A <0.24W
I-PAK
Device TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG
Package D-PAK/I-PAK D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMD16N25Z(G)/TMU16N25Z(G) 250 ±30 16 8.3 64 368 16 9.39 93.9 0.75 4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
July 2012 : Rev0
www.trinnotech.com
TMD16N25Z(G)/TMU16N25Z(G) 1.33 110
Unit ℃/W ℃/W
1/6
TMD16N25Z(G)/TMU16N25Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
...