TN0620

TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features 1.6V Maximum Low Threshold High Input Impedance 110 pF Typical Low Input Capacitance Fast Switching Speeds Low On-Resistance Free from Secondary Breakdown Low Input and Output Leakage Applications Logic-Level Interfaces (Ideal for TTL and CMOS) Solid-State Relays Battery-Operated Systems Photovoltaic Drives Analog Switches General Purpose Line Drivers Telecommunication Switches General Description The TN0620 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Type 3-lead TO-92 (Top view) See Table 3-1 for pin information.  2020 Microchip Technology Inc. SOURCE DRAIN GATE DS20005936A-page 1 TN0620 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage ............................................................