TN0620
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• 1.6V Maximum Low Threshold • High Input Impedance • 110...
TN0620
N-Channel Enhancement-Mode Vertical DMOS FET
Features
1.6V Maximum Low Threshold High Input Impedance 110 pF Typical Low Input Capacitance Fast Switching Speeds Low On-Resistance Free from Secondary Breakdown Low Input and Output Leakage
Applications
Logic-Level Interfaces (Ideal for TTL and
CMOS) Solid-State Relays Battery-Operated Systems Photovoltaic Drives Analog Switches General Purpose Line Drivers Telecommunication Switches
General Description
The TN0620 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold
voltage, high breakdown
voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Package Type
3-lead TO-92 (Top view)
See Table 3-1 for pin information. 2020 Microchip Technology Inc.
SOURCE
DRAIN
GATE
DS20005936A-page 1
TN0620
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source
Voltage ............................................................