DatasheetsPDF.com

TN2106 Datasheet

Part Number TN2106
Manufacturers Supertex Inc
Logo Supertex  Inc
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet TN2106 DatasheetTN2106 Datasheet (PDF)

TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain ► Complementary N- and P-channel devices Applications ► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo-voltaic drives ► Analog switches ► General purpose line dri.

  TN2106   TN2106






Part Number TN2106
Manufacturers Microchip
Logo Microchip
Description N-Channel Vertical DMOS FET
Datasheet TN2106 DatasheetTN2106 Datasheet (PDF)

TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General.

  TN2106   TN2106







N-Channel Enhancement-Mode Vertical DMOS FETs

TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain ► Complementary N- and P-channel devices Applications ► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo-voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal run.


2005-04-16 : LA5603    MLED930    M38198    BU2527A    F4500    ES07D    FDI047AN08A0    FMMT2484    FQP90N10V2    FQPF90N10V2   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)