TN2124

TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features Free from Secondary Breakdown Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability Integral Source-Drain Diode High Input Impedance and High Gain Applications Logic-Level Interfaces (Ideal for TTL and CMOS) Solid-State Relays Battery-Operated Systems Photovoltaic Drives Analog Switches General Purpose Line Drivers Telecommunication Switches General Description The TN2124 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type 3-lead SOT-23 (Top view) DRAIN See Table 3-1 for pin information. SOURCE GATE  2018 Microchip Technology Inc. DS20005698A-page 1 TN2124 1.0 ELECTRICAL CHARACTERIST...