TN2535 Low Threshold
New Product
N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 350V ...
TN2535 Low Threshold
New Product
N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 350V * Same as SOT-89. RDS(ON) (max) 10Ω VGS(th) (max) 2.0V ID(ON) (min) 1.0A Order Number / Package TO-243AA* TN2535N8
Product supplied on 2000 piece carrier tape reels.
Features
❏ Low threshold ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage
Product marking for TO-243AA
TN5S❋
Where ❋ = 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold
voltage, high breakdown
voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
❏ Logic level interfaces – ideal for TTL and
CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom s...