TN28F020 Datasheet PDF
FLASH MEMORY
- TN28F020 | Intel
- 256K x 8 CMOS FLASH MEMORY
- E
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n Flash Electrical Chip-Erase
2 Second Typical Chip-.
- E
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program 4 second Chip-Program
n 100,000 Erase/Program Cycles
n 12.0 V ±5% VPP
n High-Performance Read
90 ns Maximum Access Time
n CMOS Low Power Consumption
10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power
n Integrated Program/Erase Stop .
- TN28F020 | Intel
- 256K x 8 CMOS FLASH MEMORY
- E
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n Flash Electrical Chip-Erase
2 Second Typical Chip-.
- E
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program 4 second Chip-Program
n 100,000 Erase/Program Cycles
n 12.0 V ±5% VPP
n High-Performance Read
90 ns Maximum Access Time
n CMOS Low Power Consumption
10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power
n Integrated Program/Erase Stop .
- TN28F020 | Intel
- 256K x 8 CMOS FLASH MEMORY
- E
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n Flash Electrical Chip-Erase
2 Second Typical Chip-.
- E
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program 4 second Chip-Program
n 100,000 Erase/Program Cycles
n 12.0 V ±5% VPP
n High-Performance Read
90 ns Maximum Access Time
n CMOS Low Power Consumption
10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power
n Integrated Program/Erase Stop .
