TN6707A

TN6707A TN6707A NPN General Purpose Amplifier These devices is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A Sourced from process 39. C BE TO-226 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range FPN660 80 100 5.0 1.2 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Conditions IC = 10mA, IB = 0 IE = 100µA, IE = 0 IE = 1.0mA, IC = 0 VCB = 80V, IE = 0 VEB = 5.0V, IC = 0 VCE = 2.0V, IC = 50mA VCE = 2.0V, IC = 250mA VCE = 2.0V, IC = 500mA IC = 500mA, IB = 50mA IC = 1.0A, IB = 100mA VCE = 2.0V, IC = 1.0A VCE = 5.0V, IC = 200mA, f = 20MHz VCE = 5.0V, IC = 50mA, f = 20MHz 2.5 50 40 40 25 Min. 80 100 5.0 0.1 0.1 Max. Units V V V µA µA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current...