TN6725A
Discrete Power & Signal Technologies
TN6725A
CB
E
TO-226
NPN Darlington Transistor
This device is designed...
TN6725A
Discrete Power & Signal Technologies
TN6725A
CB
E
TO-226
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol VCES VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Value 50 60 12 1.2 -55 to +150
Units V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Max Characteristic TN6725A PD RθJC RθJA Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 8 50 125 W mW/°C °C/W °C/W Units
© 1997 Fairchild Semiconductor Corporation
TN6725A, Rev A
TN6725A
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS BVCES BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown
Voltage Collector-Base Breakdown
Voltage Emitter-Base...