DatasheetsPDF.com

TPCC8066-H Datasheet

Part Number TPCC8066-H
Manufacturers Toshiba
Logo Toshiba
Description MOSFETs
Datasheet TPCC8066-H DatasheetTPCC8066-H Datasheet (PDF)

TPCC8066-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCC8066-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.2 nC (typ.) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Sourc.

  TPCC8066-H   TPCC8066-H






MOSFETs

TPCC8066-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCC8066-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.2 nC (typ.) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 11 33 17 1.9 0.7 31 11 150 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability H.


2014-08-29 : 74S112    SKiiP83ANB15T4    SKIIP83ANB08    LTA320AP05    LTA320AP05-1    54S10    74S10    HCD-DZ7T    HCD-DX375    CDA-9883   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)