TPCC8070

MOSFETs Silicon N-channel MOS (U-MOS�) TPCC8070 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPCC8070 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-12-11 Rev.5.0 TPCC8070 4. Absolute Maximum Ratings (Note) (Ta = 25� unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 60 V VGSS ±20 Drain current (DC) (Note 1) ID 30 A Drain current (pulsed) Power dissipation (Note 1) IDP (Tc = 25�) PD 90 46.8 W Power dissipation (t = 10 s) (Note 2) PD 2.27 W Power dissipation (t = 10 s) (Note 3) PD 0.84 W Single-pulse avalanche energy (Note 4) EAS 52.4 mJ Avalanche current Channel temperature IAR (Note 5) Tch 30 A 175 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolu...