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TPCC8073 Datasheet

Part Number TPCC8073
Manufacturers Toshiba
Logo Toshiba
Description MOSFETs
Datasheet TPCC8073 DatasheetTPCC8073 Datasheet (PDF)

TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8073 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Adv.

  TPCC8073   TPCC8073






Part Number TPCC8076
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet TPCC8073 DatasheetTPCC8076 Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8076 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPCC8076 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Ab.

  TPCC8073   TPCC8073







Part Number TPCC8074
Manufacturers Toshiba
Logo Toshiba
Description Field Effect Transistor
Datasheet TPCC8073 DatasheetTPCC8074 Datasheet (PDF)

TPCC8074 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8074 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switchings Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON A.

  TPCC8073   TPCC8073







Part Number TPCC8070
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet TPCC8073 DatasheetTPCC8070 Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS�) TPCC8070 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPCC8070 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2023 1 Toshiba Electronic Devices.

  TPCC8073   TPCC8073







MOSFETs

TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8073 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 27 81 39 1.9 0.7 94 27 150 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Dera.


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