TPH1R712MD

MOSFETs Silicon P-Channel MOS (U-MOS) TPH1R712MD 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPH1R712MD 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current (DC) (Tc = 25  ) (Note 1) ID -60 A Drain current (pulsed) (t = 1 ms) (Note 1) IDP -200 Power dissipation (Tc = 25  ) PD 78 W Power dissipation (t = 10 s) (Note 2) PD 2.8 Power dissipation (t = 10 s) (Note 3) PD 1.6 Single-pulse avalanche energy (Note 4) EAS 468 mJ Single-pulse avalanche current IAS -60 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Ha...