DatasheetsPDF.com

TPHR6503PL Datasheet

Part Number TPHR6503PL
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-channel MOSFET
Datasheet TPHR6503PL DatasheetTPHR6503PL Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS-H) TPHR6503PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPHR650.

  TPHR6503PL   TPHR6503PL






Silicon N-channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS-H) TPHR6503PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPHR6503PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-11 2016-07-22 Rev.2.0 TPHR6503PL 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage (Note 1) VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 2) ID 150 A Drain current (DC) (Silicon limit) (Note 2), (Note 3) ID 393 A Drain current (pulsed) (t = 100 µs) (Note 2) IDP 500 A Power dissipation (Tc = 25 ) PD 170 W Power dissipation (Note 4) PD 3.0 W Power dissipation (Note 5) PD 0.96 W Single-pulse avalanche energy (Note 6) EAS 374 mJ Single-pulse avalanche current (Note 6) IAS 120 A Channel temperature Tch 175  Storage temperature Tstg -55 to 175  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th.


2019-09-11 : EW60    MUX506    FZ1500R33HE3    IPDD60R125G7    IPDD60R150G7    IPDD60R102G7    IPDD60R050G7    IPDD60R190G7    FZ600R65KE3    LM555   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)