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TPIC5203

Texas Instruments

power DMOS array

ą TPIC5203 2ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY SLIS040 − SEPTEMBER 1994 • Low rDS(on) . . . 0.26 Ω Ty...


Texas Instruments

TPIC5203

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Description
ą TPIC5203 2ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY SLIS040 − SEPTEMBER 1994 Low rDS(on) . . . 0.26 Ω Typ High Voltage Output . . . 60 V D PACKAGE (TOP VIEW) Extended ESD Capability . . . 4000 V Pulsed Current . . . 8 A Per Channel Fast Commutation Speed GND SOURCE1 GATE2 1 2 3 8 DRAIN1 7 GATE1 6 SOURCE2 DRAIN2 4 5 NC description NC − No internal connection The TPIC5203 is a monolithic gate-protected power DMOS array that consists of two independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-kΩ resistor. The TPIC5203 is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature range of − 40°C to 125°C. schematic DRAIN1 8 GATE2 3 DRAIN2 4 7 GATE1 ZC1b ZC1a Q1 D1 Z1 Q2 D2 Z2 ZC2b ZC2a 2 SOURCE1 1 GND 6 SOURCE2 NOTE: For correct operation, no terminal pin may be taken below GND. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright  1994, Texas Instruments...




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