ą TPIC5203 2ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY
SLIS040 − SEPTEMBER 1994
• Low rDS(on) . . . 0.26 Ω Ty...
ą TPIC5203 2ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY
SLIS040 − SEPTEMBER 1994
Low rDS(on) . . . 0.26 Ω Typ High
Voltage Output . . . 60 V
D PACKAGE (TOP VIEW)
Extended ESD Capability . . . 4000 V Pulsed Current . . . 8 A Per Channel Fast Commutation Speed
GND SOURCE1
GATE2
1 2 3
8 DRAIN1 7 GATE1 6 SOURCE2
DRAIN2 4
5 NC
description
NC − No internal connection
The TPIC5203 is a monolithic gate-protected
power DMOS array that consists of two
independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features
integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the
human-body model of a 100-pF capacitor in series with a 1.5-kΩ resistor.
The TPIC5203 is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature range of − 40°C to 125°C.
schematic
DRAIN1 8
GATE2 3
DRAIN2 4
7 GATE1
ZC1b ZC1a
Q1
D1 Z1
Q2 D2 Z2
ZC2b ZC2a
2 SOURCE1
1 GND
6 SOURCE2
NOTE: For correct operation, no terminal pin may be taken below GND.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright 1994, Texas Instruments...