ą TPIC5303 3ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY
SLIS039A − SEPTEMBER 1994 − REVISED SEPTEMBER 1995
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ą TPIC5303 3ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY
SLIS039A − SEPTEMBER 1994 − REVISED SEPTEMBER 1995
Low rDS(on) . . . 0.4 Ω Typ High
Voltage Output . . . 60 V
D PACKAGE (TOP VIEW)
Extended ESD Capability . . . 4000 V Pulsed Current . . . 5 A Per Channel Fast Commutation Speed
DRAIN2 DRAIN2 SOURCE2
1 2 3
16 GATE1 15 SOURCE1 14 SOURCE1
description
SOURCE2 4 GATE2 5
13 DRAIN1 12 DRAIN1
The TPIC5303 is a monolithic gate-protected power DMOS array that consists of three independent electrically isolated N-channel
DRAIN3 DRAIN3
GND
6 7 8
11 SOURCE3 10 SOURCE3 9 GATE3
enhancement-mode DMOS transistors. Each
transistor features integrated high-current zener
diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF
capacitor in series with a 1.5-kΩ resistor.
The TPIC5303 is offered in a standard 16-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature range of − 40°C to 125°C.
schematic
DRAIN1 12, 13
GATE2 5
DRAIN2 1, 2
GATE3 9
DRAIN3 6, 7
Q1
GATE1 16 ZC1b ZC1a
D1 Q2 Z1
ZC2b ZC2a
D2 Z2
Q3
ZC3b ZC3a
D3 Z3
14, 15
8
SOURCE1 GND
3, 4 SOURCE2
NOTE A: For correct operation, no terminal pin may be taken below GND.
10, 11 SOURCE3
PRODUCTION DATA information is current as of publication date. Products conform to specifications per t...