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TPIC5303

Texas Instruments

power DMOS array

ą TPIC5303 3ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY SLIS039A − SEPTEMBER 1994 − REVISED SEPTEMBER 1995 • L...


Texas Instruments

TPIC5303

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Description
ą TPIC5303 3ĆCHANNEL INDEPENDENT GATEĆPROTECTED POWER DMOS ARRAY SLIS039A − SEPTEMBER 1994 − REVISED SEPTEMBER 1995 Low rDS(on) . . . 0.4 Ω Typ High Voltage Output . . . 60 V D PACKAGE (TOP VIEW) Extended ESD Capability . . . 4000 V Pulsed Current . . . 5 A Per Channel Fast Commutation Speed DRAIN2 DRAIN2 SOURCE2 1 2 3 16 GATE1 15 SOURCE1 14 SOURCE1 description SOURCE2 4 GATE2 5 13 DRAIN1 12 DRAIN1 The TPIC5303 is a monolithic gate-protected power DMOS array that consists of three independent electrically isolated N-channel DRAIN3 DRAIN3 GND 6 7 8 11 SOURCE3 10 SOURCE3 9 GATE3 enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-kΩ resistor. The TPIC5303 is offered in a standard 16-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature range of − 40°C to 125°C. schematic DRAIN1 12, 13 GATE2 5 DRAIN2 1, 2 GATE3 9 DRAIN3 6, 7 Q1 GATE1 16 ZC1b ZC1a D1 Q2 Z1 ZC2b ZC2a D2 Z2 Q3 ZC3b ZC3a D3 Z3 14, 15 8 SOURCE1 GND 3, 4 SOURCE2 NOTE A: For correct operation, no terminal pin may be taken below GND. 10, 11 SOURCE3 PRODUCTION DATA information is current as of publication date. Products conform to specifications per t...




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