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TPN11006NL

Toshiba

MOSFETs

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TPN11006NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11006NL 1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)...


Toshiba

TPN11006NL

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