TPN13008NH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN13008NH
1. Applications
• • • DC-DC Converters Switching Voltage...
TPN13008NH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN13008NH
1. Applications
DC-DC Converters Switching
Voltage Regulators Motor Drivers
2. Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source
voltage Gate-source
voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (Tc = 25 ) (t = 1 ms) (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 80 ±20 40 18 98 42 1.9 0.7 114 18 150 -55 to 150 A W W W mJ A Unit V V A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Pleas...