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TPN1R603PL Datasheet

Part Number TPN1R603PL
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-channel MOSFET
Datasheet TPN1R603PL DatasheetTPN1R603PL Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1R603PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ.) (3) Small output charge: Qoss = 23 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Cir.

  TPN1R603PL   TPN1R603PL






Silicon N-channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1R603PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ.) (3) Small output charge: Qoss = 23 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN1R603PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-08 2016-08-25 Rev.1.0 TPN1R603PL 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage (Note 1) VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 2) ID 80 A Drain current (DC) (Silicon limit) (Note 2), (Note 3) ID 188 Drain current (pulsed) (t = 100 µs) (Note 2) IDP 200 Power dissipation (Tc = 25 ) PD 104 W Power dissipation (Note 4) PD 2.67 Power dissipation (Note 5) PD 0.63 Single-pulse avalanche energy (Note 6) EAS 52 mJ Single-pulse avalanche current (Note 6) IAS 80 A Channel temperature Tch 175  Storage temperature Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th.


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