MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN4R303NL
1. Applications
• High-Efficiency DC-DC Converters • Switching Voltage Regulators
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.1 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TPN4R303NL
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
63 A
Drain current (DC)
(Tc = 25 )
(Note 1)
ID
40
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
154
Power dissipation
(Tc = 25 )
PD 34 W
Power dissipation
(t = 10 s)
(Note 3)
PD
1.9
Power dissipation
(t = 10 s)
(Note 4)
PD
0.7
Single-pulse avalanche energy
(Note 5)
EAS
37 mJ
Avalanche current
IAR 40 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum rati.