TPN5900CNH

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN5900CNH 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN5900CNH TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1 2013-10-07 Rev.1.0 TPN5900CNH 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 150 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 18 A Drain current (DC) (Continuous) (Note 1) ID 9.0 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 35 Power dissipation (Tc = 25 ) PD 39 W Power dissipation (t = 10 s) (Note 3) PD 1.9 Power dissipation (t = 10 s) (Note 4) PD 0.7 Single-pulse avalanche energy (Note 5) EAS 37 mJ Avalanche current IAR 9.0 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ...