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TPS611

Toshiba

Phototransistor

TPS611(F) TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS611(F) Photoelectric Counter Various Kinds Of Readers...


Toshiba

TPS611

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Description
TPS611(F) TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS611(F) Photoelectric Counter Various Kinds Of Readers Position Detection φ5mm epoxy resin package(black) High sensitivity: IL = 120μA(typ.) Half value angle: θ1/2 = ±8°(typ.) Protected from external light by black mold packaging. Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector−emitter voltage Emitter−Collector voltage Collector current Collector power dissipation Collector power dissipation derating(Ta>25°C) Operating temperature range Storage temperature range Symbol VCEO VECO IC PC ΔPC /°C Topr Tstg Rating 30 5 50 150 −2 −20~75 −30~100 Unit V V mA mW mW/°C °C °C TOSHIBA Weight: 0.3 g (typ.) 0−5C1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Pin Connection 2 1. Emitter 2. Collector 1 Opto−electrical Characteristics (Ta = 25°C) Characteristics Dark current Light current Collector−emitter saturation voltage Switching time Rise t...




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